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1

Dangling bond surface state of Si(111): New results

G.M. Guichar, F. Houzay, R. Pinchaux, Y. Pétroff

Journal:

Solid State Communications

Year:

1981

Language:

english

File:

PDF, 293 KB

english, 1981

2

Three-dimensional band structure of graphite studied by angle-resolved photoemission using ultraviolet synchrotron radiation

Marchand, D., Frétigny, C., Laguës, M., Batallan, F., Simon, Ch., Rosenman, I., Pinchaux, R.

Journal:

Physical Review B

Year:

1984

Language:

english

File:

PDF, 465 KB

english, 1984

3

ZnTe/GaAs(001): Growth mode and strain evolution during the early stages of molecular-beam-epitaxy heteroepitaxial growth

Etgens, V. H., Sauvage-Simkin, M., Pinchaux, R., Massies, J., Jedrecy, N., Waldhauer, A., Tatarenko, S., Jouneau, P. H.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 2.16 MB

english, 1993

4

Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films

A. Charrier, A. Coati, T. Argunova, F. Thibaudau, Y. Garreau, R. Pinchaux, I. Forbeaux, J. Debever, M. Sauvage-simkin, J. Themlin

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 553 KB

english, 2002

5

on Si(111)

Jedrecy, N., Waldhauer, A., Sauvage-Simkin, M., Pinchaux, R., Zheng, Y.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 484 KB

english, 1994

6

Angle-resolved photoemission study of CuI

Gross, J. G., Fliyou, M., Lewonczuk, S., Ringeissen, J., Pinchaux, R.

Journal:

Physical Review B

Year:

1988

Language:

english

File:

PDF, 717 KB

english, 1988

7

Electronic structure of the Bi(111) surface

Jezequel, G., Petroff, Y., Pinchaux, R., Yndurain, Félix

Journal:

Physical Review B

Year:

1986

Language:

english

File:

PDF, 375 KB

english, 1986

8

Structural analysis of the (1×1)-Bi/GaAs(110) interface

Ruocco, A., Jedrecy, N., Pinchaux, R., Sauvage-Simkin, M., Waldhauer, A., Betti, Maria Grazia, Mariani, Carlo

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 221 KB

english, 1994

9

Experimental determination of local-bonding configuration at the early stages of growth of the heterogeneous Pt/InP(110) interface by synchrotron-radiation spectroscopy

Claverie, P., Carriere, B., Pinchaux, R., Rossi, G.

Journal:

Physical Review B

Year:

1988

Language:

english

File:

PDF, 400 KB

english, 1988

10

Angle-resolved-photoemission study of the Cr(100) surface

Gewinner, G., Peruchetti, J. C., Jaéglé, A., Pinchaux, R.

Journal:

Physical Review B

Year:

1983

Language:

english

File:

PDF, 316 KB

english, 1983

11

As alloys: A first-principles study

Bellaiche, L., Kunc, K., Sauvage-Simkin, M., Garreau, Y., Pinchaux, R.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 80 KB

english, 1996

12

Epitaxial continued-layer structure of Sb on GaAs(110) as observed by grazing-incidence x-ray diffraction

Betti, Maria Grazia, Mariani, Carlo, Jedrecy, N., Pinchaux, R., Ruocco, A., Sauvage-Simkin, M.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 327 KB

english, 1994

13

Experimental valence-band structure of tin disulfide Sn

Bertrand, Yves, Barski, A., Pinchaux, R.

Journal:

Physical Review B

Year:

1985

Language:

english

File:

PDF, 177 KB

english, 1985

14

on Si(111)

Jedrecy, N., Zheng, Y., Waldhauer, A., Sauvage-Simkin, M., Pinchaux, R.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 767 KB

english, 1993

15

Indirect transitions in angle-resolved photoemission

Jezequel, G., Barski, A., Steiner, P., Solal, F., Roubin, P., Pinchaux, R., Petroff, Y.

Journal:

Physical Review B

Year:

1984

Language:

english

File:

PDF, 256 KB

english, 1984

16

Angle-resolved photoemission study of Zn0.15Hg0.85Te: valence band determination

A. Marbeuf, D. Ballutaud, P. Martin, R. Triboulet, Y. Marfaing, J.E. Bonnet, K. Hricovini, R. Pinchaux

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 404 KB

english, 1992

17

Formation of the ZnTe/(001) GaAs interface

S. Tatarenko, J. Cibert, K. Saminadayar, P.H. Jouneau, V.H. Etgens, M. Sauvage-Simkin, R. Pinchaux

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 380 KB

english, 1993

18

A new design for high flux grazing incidence monochromator for synchrotron radiation

Claude Depautex, Pierre Thiry, Robert Pinchaux, Yves Petroff, Didier Lepere, Geneviève Passereau, Jean Flamand

Journal:

Nuclear Instruments and Methods

Year:

1978

Language:

english

File:

PDF, 122 KB

english, 1978

19

The development of toroidal grating monochromators at L.U.R.E.

P. Thiry, C. Depautex, R. Pinchaux, Y. Pétroff, D. Lepère, G. Passereau

Journal:

Nuclear Instruments and Methods

Year:

1980

Language:

english

File:

PDF, 27 KB

english, 1980

20

Synchrotron radiation measurements and calculation of core to conduction level transitions in lead chalcogenides

G. Martinez, M. Schlüter, Marvin L. Cohen, R. Pinchaux, P. Thiry, D. Dagneaux, Y. Petroff

Journal:

Solid State Communications

Year:

1975

Language:

english

File:

PDF, 405 KB

english, 1975

21

Properties photoelectriques de l'arsenic cristallise entre 7 et 11,4 eV

C. Raisin, R. Pinchaux

Journal:

Solid State Communications

Year:

1975

Language:

french

File:

PDF, 357 KB

french, 1975

22

Experimental band structure of GaSe obtained by angular resolved photoemission

P. Thiry, Y. Petroff, R. Pinchaux, C. Guillot, Y. Ballu, J. Lecante, J. Paigné, F. Levy

Journal:

Solid State Communications

Year:

1977

Language:

english

File:

PDF, 376 KB

english, 1977

23

Experimental determination of the valence band structure of PbSe

P. Thiry, R. Pinchaux, G. Martinez, Y. Pétroff, J. Lecante, J. Paigné, Y. Ballu, C. Guillot, D. Spanjaard

Journal:

Solid State Communications

Year:

1978

Language:

english

File:

PDF, 351 KB

english, 1978

24

The reflection spectrum of cuprous chloride in the 4.5−30 eV range and the related band structure

J.G. Gross, S. Lewonczuk, M.A. Khan, R. Pinchaux, J. Ringeissen

Journal:

Solid State Communications

Year:

1980

Language:

english

File:

PDF, 413 KB

english, 1980

25

Angle resolved photoemission valence band dispersions E(k) for gaP.

F. Solal, G. Jezequel, F. Houzay, A. Barski, R. Pinchaux

Journal:

Solid State Communications

Year:

1984

Language:

english

File:

PDF, 279 KB

english, 1984

26

Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface

W.N. Rodrigues, V.H. Etgens, M. Sauvage-Simkin, G. Rossi, F. Sirotti, R. Pinchaux, F. Rochet

Journal:

Solid State Communications

Year:

1995

Language:

english

File:

PDF, 528 KB

english, 1995

27

Dangling bond states on HgSe(110) surface

B.A. Orłowski, B.J. Kowalski, J. Bonnet, C. Hricovini, R. Pinchaux

Journal:

Year:

1994

Language:

english

File:

PDF, 236 KB

english, 1994

28

Angle-resolved photoemission of the Si(111) 7 × 7 surface

F. Houzay, G.M. Guichar, R. Pinchaux, P. Thiry, Y. Petroff, D. Dagneaux

Journal:

Surface Science Letters

Year:

1980

Language:

english

File:

PDF, 118 KB

english, 1980

29

Passivation of Si (111) surfaces by ordered metal layers

A. Cros, F. Houzay, G.M. Guichar, R. Pinchaux

Journal:

Surface Science Letters

Year:

1982

Language:

english

File:

PDF, 216 KB

english, 1982

30

Si(111) 2×1 studies by angle resolved photoemission

F. Houzay, G. Guichar, R. Pinchaux, G. Jezequel, F. Solal, A. Barsky, P. Steiner, Y. Petroff

Journal:

Surface Science Letters

Year:

1983

Language:

english

File:

PDF, 53 KB

english, 1983

31

Angle resolved photoemission measurements on Ag-Si(111) 7 × 7 interfaces

F. Houzay, G.M. Guichar, A. Cros, F. Salvan, R. Pinchaux, J. Derrien

Journal:

Surface Science Letters

Year:

1983

Language:

english

File:

PDF, 377 KB

english, 1983

32

Submonolayer to monolayer transition in the growth of the Au: InP(110) interface

Andrzej Barski, Robert Pinchaux, Giorgio Rossi

Journal:

Surface Science Letters

Year:

1985

Language:

english

File:

PDF, 41 KB

english, 1985

33

Structure of in-situ grown GaAs(001) reconstructed surfaces by grazing incidence X-ray diffraction

M. Sauvage-Simkin, R. Pinchaux, J. Massies, P. Claverie, J. Bonnet, N. Jedrecy, I.K. Robinson

Journal:

Surface Science Letters

Year:

1989

Language:

english

File:

PDF, 44 KB

english, 1989

34

Concentration gradients and reactivity at the Yb/InP(110) interface

P. De Padova, X.F. Jin, B. Carriére, R. Pinchaux, G. Rossi

Journal:

Surface Science Letters

Year:

1989

Language:

english

File:

PDF, 53 KB

english, 1989

35

Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction

V.H. Etgens, R. Pinchaux, M. Sauvage-Simkin, J. Massies, N. Jedrecy, N. Greiser, S. Tatarenko

Journal:

Surface Science Letters

Year:

1991

Language:

english

File:

PDF, 58 KB

english, 1991

36

Structural approach to II–VI/GaAs heterostructures: precursor states and strain accommodation in the early stages of MBE growth

V.H. Etgens, R. Pinchaux, M. Sauvage-Simkin, J. Massies, N. Jedrecy, N. Greiser, A. Waldhauer, S. Tatarenko

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 366 KB

english, 1992

37

Electronic structure and fano-type resonance effects in uranium antimonide studied by photoemission with synchrotron radiation

R. Baptist, M. Belakhovsky, M.S.S. Brooks, R. Pinchaux, Y. Baer, O. Vogt

Journal:

Year:

1980

Language:

english

File:

PDF, 201 KB

english, 1980

38

Electronic properties of gold-silicon (111) 7 × 7 interfaces

F. Houzay, A. Cros, F. Salvan, J. Derrien, G.M. Guichar, R. Pinchaux

Journal:

Year:

1983

Language:

english

File:

PDF, 212 KB

english, 1983

39

Structural approach of the Fe-Si(1 1 1) annealed interface

M. Sauvage-Simkin, N. Jedrecy, A. Waldhauer, R. Pinchaux

Journal:

Physica B: Condensed Matter

Year:

1994

Language:

english

File:

PDF, 508 KB

english, 1994

40

Atomic structure of the (3 × 2) Si–GaAs (0 0 1) reconstructed surface: A clue to δ doping mechanism derived from in situ grazing incidence X-ray diffraction data

M. Sauvage-Simkin, Y. Garreau, R. Pinchaux, A. Coati, A. Ouerghi, B. Etienne

Journal:

Surface Science

Year:

2010

Language:

english

File:

PDF, 424 KB

english, 2010

41

Molecular packing in new Langmuir-Blodgett systems investigated by X-ray specular reflectivity and grazing incidence X-ray diffraction

C. Giannini, L. Tapfer, M. Sauvage-Simkin, Y. Garreau, N. Jedrecy, M.B. Véron, R. Pinchaux, M. Burghard, S. Roth

Journal:

Thin Solid Films

Year:

1996

Language:

english

File:

PDF, 429 KB

english, 1996

42

The hexagonal polar ZnO(0001)-(1×1) surfaces: structural features as stemming from X-ray diffraction

N Jedrecy, M Sauvage-Simkin, R Pinchaux

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 110 KB

english, 2000

43

Reconstruction and chemical ordering at the surface of strained (In, Ga) As epilayers

M. Sauvage-Simkin, Y. Garreau, R. Pinchaux, A. Cavanna, M.B. Véron, N. Jedrecy, J.P. Landesman, J. Nagle

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 385 KB

english, 1996

44

On the growth process of a layered material on a covalent substrate: GaSe/Si

Nathalie Jedrecy, Robert Pinchaux, M. Eddrief

Journal:

Physica B: Condensed Matter

Year:

1998

Language:

english

File:

PDF, 273 KB

english, 1998

45

X-ray specular reflectivity and grazing incidence X-ray diffraction of new Langmuir-Blodgett multilayers

C. Giannini, L. Tapfer, M. Sauvage-Simkin, Y. Garreau, N. Jedrecy, M. B. Véron, R. Pinchaux, M. Burghard, S. Roth

Journal:

Il Nuovo Cimento D

Year:

1997

Language:

english

File:

PDF, 658 KB

english, 1997

46

Misfit evolution in the early stages of the heteroepitaxial growth of GaAs on Si(001): An in-situ X-ray scattering study

N. Jedrecy, M. Sauvage-Simkin, R. Pinchaux, J. Massies, N. Greiser, V.H. Etgens

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 753 KB

english, 1990

47

Electron-hole interaction of the d core levels in III–V semiconductors

P. Thiry, Y. Petroff, R. Pinchaux, James R. Chelikoxsky, Marvin L. Cohen

Journal:

Solid State Communications

Year:

1976

Language:

english

File:

PDF, 265 KB

english, 1976

48

In situ monitoring of the c( 4 × 4) to the 2 × 4 surface phase transformation on GaAs(001) by grazing incidence X-ray diffraction

V.H. Etgens, M. Sauvage-Simkin, R. Pinchaux, J. Massies, N. Jedrecy, A. Waldhauer, N. Greiser

Journal:

Surface Science

Year:

1994

Language:

english

File:

PDF, 656 KB

english, 1994

49

The ZnO non-polar (101̄0) surface: an X-ray structural investigation

N. Jedrecy, S. Gallini, M. Sauvage-Simkin, R. Pinchaux

Journal:

Surface Science

Year:

2000

Language:

english

File:

PDF, 240 KB

english, 2000

50

Atomic structure of the (2×4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indium segregation

K. Aı̈d, Y. Garreau, M. Sauvage-Simkin, R. Pinchaux

Journal:

Surface Science

Year:

1999

Language:

english

File:

PDF, 441 KB

english, 1999